APTGT100BB60T3G APTGT100BB60T3G C rev 2 october, 2012 www.microsemi.com 1 C 6 all multiple inputs and outputs must be shorted together example: 10/11 ; 13/14 ; 6/7 all ratings @ t j = 25c unless otherwise specified these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. see application note apt0502 on www.microsemi.com application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt3 technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? very low stray inductance ? kelvin emitter for easy drive ? internal thermistor for temperature monitoring ? high level of integration benefits ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant boost buck chopper trench + field stop igbt3 power module v ces = 600v i c = 100a* @ tc = 80c downloaded from: http:///
APTGT100BB60T3G APTGT100BB60T3G C rev 2 october, 2012 www.microsemi.com 2 C 6 absolute maximum ratings (per igbt) * specification of device but output current must be limited due to size of output pins. electrical characteristics (per igbt) symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a t j = 25c 1.5 1.9 v ce(sat) collector emitter saturation voltage v ge =15v i c = 100a t j = 150c 1.7 v v ge(th) gate threshold voltage v ge = v ce , i c = 1.5 ma 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics (per igbt) symbol characteristic test conditions min typ max unit c ies input capacitance 6100 c oes output capacitance 390 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 190 pf q g gate charge v ge = 15v ; v ce =300v i c =100a 1.1 c t d(on) turn-on delay time 115 t r rise time 45 t d(off) turn-off delay time 225 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 100a r g = 3.3 ? 55 ns t d(on) turn-on delay time 130 t r rise time 50 t d(off) turn-off delay time 300 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 100a r g = 3.3 ? 70 ns t j = 25c 0.4 e on turn on energy t j = 150c 0.875 mj t j = 25c 2.5 e off turn off energy v ge = 15v v bus = 300v i c = 100a r g = 3.3 ? t j = 150c 3.5 mj i sc short circuit data v ge 15v ; v bus = 360v t p 6s ; t j = 150c 500 a symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 150* i c continuous collector current t c = 80c 100* i cm pulsed collector current t c = 25c 200 a v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 340 w rbsoa reverse bias safe operating area t j = 150c 200a @ 550v downloaded from: http:///
APTGT100BB60T3G APTGT100BB60T3G C rev 2 october, 2012 www.microsemi.com 3 C 6 reverse diode ratings and characteristics (per diode) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 150 i rm maximum reverse leakage current v r =600v t j = 150c 400 a i f dc forward current tc = 80c 100 a t j = 25c 1.6 2 v f diode forward voltage i f = 100a v ge = 0v t j = 150c 1.5 v t j = 25c 100 t rr reverse recovery time t j = 150c 150 ns t j = 25c 5.1 q rr reverse recovery charge t j = 150c 10.7 c t j = 25c 1.2 e r reverse recovery energy i f = 100a v r = 300v di/dt =2500a/s t j = 150c 2.4 mj thermal and package characteristics symbol characteristic min typ max unit per igbt 0.44 r thjc junction to case thermal resistance per diode 0.77 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 110 g temperature sensor ntc symbol characteristic min typ max unit r 25 resistance @ 25c 22 k ? ? r 25 /r 25 resistance tolerance 5 ? b/b beta tolerance 3 % b 25/100 t 25 = 298.16 k 3980 k ? ?? ? ? ?? ? ? ?? ? ? ?? ? ? ? t t b r r t 1 1 exp 25 100/25 25 t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTGT100BB60T3G APTGT100BB60T3G C rev 2 october, 2012 www.microsemi.com 4 C 6 sp3f package outline (dimensions in mm) typical performance curve forward characteristic of diode t j =25c t j =125c t j =150c 0 25 50 75 100 125 150 175 200 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) hard switching zcs zvs 0 20 40 60 80 100 120 0 25 50 75 100 125 150 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =3.3 ? t j =150c t c =85c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs p ulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) diode downloaded from: http:///
APTGT100BB60T3G APTGT100BB60T3G C rev 2 october, 2012 www.microsemi.com 5 C 6 output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 25 50 75 100 125 150 175 200 0 0.5 1 1.5 2 2.5 3 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 25 50 75 100 125 150 175 200 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =125c t j =150c 0 25 50 75 100 125 150 175 200 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 1 2 3 4 5 6 7 0 25 50 75 100 125 150 175 200 i c (a) e (mj) v ce = 300v v ge = 15v r g = 3.3 ? t j = 150c eon eon eoff er 0 2 4 6 8 0 5 10 15 20 25 30 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 100a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 50 100 150 200 250 0 100 200 300 400 500 600 700 v ce (v) i f (a) v ge =15v t j =150c r g =3.3 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) igbt downloaded from: http:///
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